High-density plasma chemical vapor deposition of silicon-based dielectric films for integrated circuits

Current-Voltage Testing of Candidate Dielectric Materials for 500 °C SiC Integrated Circuits

High temperature operation (500 °C and higher) of integrated circuits offers important benefits to harsh environment applications such as aerospace, aeronautics, and energy production. SiC-based electronics are a promising solution to this need for high temperature operation. However, thermally activated degradation of materials used in conjunction with SiC (such as interconnect metals and insu...

ALD HfO2, Al2O3, and PECVD Si3N4 as MIM Capacitor Dielectric for GaAs HBT Technology

Characterization was performed on 60 nm +/3 nm films of atomic layer deposition (ALD) hafnium dioxide (HfO2) and aluminum oxide (Al2O3), and plasma-enhanced chemical vapor deposition (PECVD) silicon nitride (Si3N4) as MIM capacitor dielectric for GaAs HBT technology. The capacitance density of MIM capacitor with ALD HfO2 (2.73 fF/m 2 ) and Al2O3 (1.55 fF/m 2 ) is significantly higher than tha...

Low Temperature High Density Highly Uniform Si3N4 Technology for Passive and Active Devices in MMMIC Applications

In this work a novel, high quality, high-density, 100% yield, deposited at room temperature ultra thin 5nm Si3N4 Metal Insulator Metal (MIM) capacitor process for Monolithic Millimetre-wave Integrated Circuits (MMMICs) applications is demonstrated using inductively coupled plasma enhanced chemical vapor deposition technique (ICP-CVD). Capacitance of 6.7fF/μm and a breakdown electric field of mo...

Plasma-enhanced Chemical Vapor Deposition of silicon dioxide Optimizing dielectric films through plasma characterization

Characterization of atomic layer deposition HfO2, Al2O3, and plasma- enhanced chemical vapor deposition Si3N4 as metal–insulator–metal capacitor dielectric for GaAs HBT technology

Characterization was performed on the application of atomic layer deposition (ALD) of hafnium dioxide (HfO2) and aluminum oxide (Al2O3), and plasma-enhanced chemical vapor deposition (PECVD) of silicon nitride (Si3N4) as metal–insulator–metal (MIM) capacitor dielectric for GaAs heterojunction bipolar transistor (HBT) technology. The results show that the MIM capacitor with 62 nm of ALD HfO2 res...